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FDA2712 N-Channel UltraFET Trench MOSFET
April 2007
FDA2712
N-Channel UltraFET Trench MOSFET
250V, 64A, 34m Features
* * * * * * RDS(on) = 29.2m @VGS = 10 V, ID = 40A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant
UltraFET
tm
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications
* PDP application
D
G GDS
TO-3PN
S
MOSFET Maximum Ratings
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 3) Ratings 250 30 64 44 240 245 4.5 357 2.85 -55 to +150 300 Units V V A A mJ V/ns W W/oC
oC o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.35 40 Units
o
C/W
(c)2007 Fairchild Semiconductor Corporation FDA2712 Rev. A
1
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FDA2712 N-Channel UltraFET Trench MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDA2712 Device FDA2712 Package TO-3PN Reel Size N/A Tape Width N/A Quantity 30
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 250V VGS = 0V TJ = 125oC 250 0.2 1 500 100 V V/oC A A nA
VGS = 20V, VDS = 0V
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 40A VDS = 10V, ID = 40A
(Note 4)
3.0 -
3.9 29.2 43
5.0 34 -
V m S
Dynamic Characteristics
Ciss Coss Crss Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 125V, ID = 80A VGS = 10V (Note 4, 5)
7650 550 105 99 46 21
10175 735 155 129 -
pF pF pF nC nC nC
-
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 125V, ID = 80A VGS = 10V, RGEN = 25
(Note 4, 5)
-
128 371 143 210
266 751 295 429
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 80A VGS = 0V, ISD = 80A dIF/dt = 100A/s
(Note 4)
-
175 1.17
80 240 1.2 -
A A V ns C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 22.2A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 80A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDA2712 Rev. A
2
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FDA2712 N-Channel UltraFET Trench MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
300
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V
Figure 2. Transfer Characteristics
1000
100
ID,Drain Current[A]
ID,Drain Current[A]
100
150 C
o
-55 C
o
10
10
25 C
o
* Notes : 1. 250s Pulse Test
1 0.1
2. TC = 25 C
o
* Notes : 1. VDS = 20V 2. 250s Pulse Test
1 VDS, Drain-Source Voltage[V]
10
1
4
6 8 VGS,Gate-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.08
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
1000
VGS = 0V
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
0.06
100
150 C
o
25 C
o
0.04
VGS = 10V VGS = 20V
10
0.02
* Note : TJ = 25 C
o
0
50 100 150 ID, Drain Current [A]
200
1 0.3
0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V]
1.5
Figure 5. Capacitance Characteristics
10000
Ciss
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 50V VDS = 125V VDS = 200V
8000 Capacitances [pF]
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
8
6000
Coss
6
4000
* Note: 1. VGS = 0V 2. f = 1MHz
4
2000
Crss
2
* Note : ID = 80A
0 0.1
0
1 10 VDS, Drain-Source Voltage [V]
30
0
20
40 60 80 100 Qg, Total Gate Charge [nC]
120
FDA2712 Rev. A
3
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FDA2712 N-Channel UltraFET Trench MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100
* Notes : 1. VGS = 10V 2. ID = 40A
BVDSS, [Normalized] Drain-Source Breakdown Voltage
1.1
1.0
0.9
* Notes : 1. VGS = 0V 2. ID = 250A
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
1000
Figure 10. Maximum Drain Current vs. Case Temperature
80
ID, Drain Current [A]
100
100s
10
Operation in This Area is Limited by R DS(on) * Notes :
1ms 10ms 100ms
ID, Drain Current [A]
400
60
40
1
0.1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
20
0.01
1
10 100 VDS, Drain-Source Voltage [V]
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
10
Thermal Response [ZJC]
0
0.5
10
-1
0.2 0.1 0.05
PDM t1 t2
o
10
-2
0.02 0.01 Single pulse
* Notes : 1. ZJC(t) = 0.35 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
10
-3
10
-5
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
10
0
10
1
FDA2712 Rev. A
4
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FDA2712 N-Channel UltraFET Trench MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA2712 Rev. A
5
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FDA2712 N-Channel UltraFET Trench MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDA2712 Rev. A
6
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FDA2712 N-Channel UltraFET Trench MOSFET
Mechanical Dimensions
TO-3PN
FDA2712 Rev. A
7
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FDA2712 N-Channel UltraFET Trench MOSFET
tm
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM Motion-SPMTM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM PDP-SPMTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R)
TM
tm
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information Preliminary
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I25
No Identification Needed
Full Production
Obsolete
Not In Production
FDA2712 Rev. A
8
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